This parameter is calculated from NSUB if not specified (see Common Threshold Voltage Parameters). This parameter is calculated from GAMMA if not specified. Gate subthreshold factor (typical value=1)īulk surface doping. This parameter is calculated from NSUB if not specified (see Common Threshold Voltage Parameters).ĭrain subthreshold factor (typical value=1) Narrow width factor for adjusting thresholdĭrain-induced barrier lowering (DIBL) effect coefficient for threshold voltageīody effect factor. Thermal voltage multiplier for the weak inversion equation MODEL statement, it replaces WD in the Weff calculation for AC gate capacitance. This parameter is the same as WD, but if WDAC is included in the. Lateral diffusion into channel from bulk along width MODEL statement, it replaces LD in the Leff calculation for AC gate capacitance. This parameter is the same as LD, but if LDAC is included in the. When LD is unspecified, but XJ is specified, If LD and XJ are unspecified, LD default=0.0. Lateral diffusion into channel from source and drain diffusion. An exception is the BSIM (LEVEL 13) model, where DEL is not present. Use zero to indicate an infinite value.Įffective Channel Width and Length ParametersĬhannel length reduction on each side. Slope of doping concentration versus vsb (element parameter). This parameter is calculated from TOX if not specified.Ĭritical electric field for carrier velocity saturation, from Grove: Use LEVEL 8 for the advanced model using finite differences. This section lists the LEVEL 8 model parameters. LEVEL 2 differs from LEVEL 8 in the following areas: the effective substrate doping, threshold voltage, effective mobility, channel length modulation, and subthreshold current. The LEVEL 8 model, derived from research at Intersil and General Electric, is an enhanced version of the LEVEL 2 ids equation.

Pspice mosfet model parameters